Mass transport effect and surface relief formation in AsxS100-x nanolayers

KONDRAT, O.; HOLOMB, R.; CSIK, A.; VERES, M.; MITSA, V.

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dc.contributor.author	KONDRAT, O.
dc.contributor.author	HOLOMB, R.
dc.contributor.author	CSIK, A.
dc.contributor.author	VERES, M.
dc.contributor.author	MITSA, V.
dc.date.accessioned	2019-11-04T10:35:02Z
dc.date.available	2019-11-04T10:35:02Z
dc.date.issued	2019
dc.identifier.citation	KONDRAT, O., HOLOMB, R., CSIK, A., VERES, M., MITSA, V. Mass transport effect and surface relief formation in AsxS100-x nanolayers. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, p. 42.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/5977
dc.description	Abstract	en_US
dc.description.abstract	Unique structural, electronic and optical properties have determined many various applications of chalcogenide glassy (ChG) materials. The large refractive indices and third-order optical nonlinearities of the chalcogenide glasses make them the best candidates for the photonic devices to ultrafast all-optical switching and data processing.Various applications have been proposed on the basis of the light sensitivity of non-crystalline chalcogenides, especially in amorphous thin film form. Photosensitivity is a key feature of chalcogenide glasses for phasechange memory, direct waveguide and grating writing.	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	chalcogenide glassy (ChG) materials	en_US
dc.subject	complex structural investigation	en_US
dc.subject	nanolayers	en_US
dc.title	Mass transport effect and surface relief formation in AsxS100-x nanolayers	en_US
dc.type	Article	en_US