Nano-structure formation in ternary chalcogenide thin films

dc.contributor.author	IASENIUC, O.V.
dc.contributor.author	IOVU, M.S.
dc.date.accessioned	2019-11-03T20:58:05Z
dc.date.available	2019-11-03T20:58:05Z
dc.date.issued	2019
dc.identifier.citation	Iaseniuc, O.V., Iovu, M.S. Nano-structure formation in ternary chalcogenide thin films. In: AmorphousandNanostructuredChalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, pp. 36-37.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/5961
dc.description	Abstract	en_US
dc.description.abstract	Thin films of As-S-Se-Sn and As-Se-Ge chalcogenide semiconductors of different composition have been used for direct e-beam recording of diffraction grating structures by SEM, EBL, and holography techniques. As a result it was established that in these gratings besides modulation of the amplitude phase characteristics the formation of a nano-relief takes place, which correspond to the amplitude and relief-phase changes.	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	thin films	en_US
dc.subject	ternary chalcogenide	en_US
dc.subject	semiconductors	en_US
dc.title	Nano-structure formation in ternary chalcogenide thin films	en_US
dc.type	Article	en_US