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Electron microscopy studies of the crystallization of Ge2Sb2Te5 thin films for phase change memory

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dc.contributor.author SYBINA, YU.
dc.contributor.author YAKUBOV, A.
dc.contributor.author LAZARENKO, P.
dc.contributor.author VOROBYOV, YU.
dc.contributor.author BABICH, A.,
dc.contributor.author BORGARDT, N.
dc.contributor.author KOZYUKHIN, S.
dc.contributor.author SHERCHENKOV, A.
dc.date.accessioned 2019-11-02T13:04:54Z
dc.date.available 2019-11-02T13:04:54Z
dc.date.issued 2019
dc.identifier.citation SYBINA, YU., YAKUBOV, A., LAZARENKO, P. et al. Electron microscopy studies of the crystallization of Ge2Sb2Te5 thin films for phase change memory. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, pp. 32-33. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/5915
dc.description Abstract en_US
dc.description.abstract The Ge2Sb2Te5 (GST225) thin films are widely used in the nonvolatile phase change memory (PCM) [1]. The crystallization process is the slowest part of a PCM operation, thus limiting the overall performance of the PCM devices [2]. Understanding of the crystallization process is critically important for the optimization of the material and increasing the processing speed of PCM. So, the aim of this work was studying the phase transitions of GST225 thin films by transmission electron microscopy (TEM). en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject thin films en_US
dc.subject electron microscopy en_US
dc.subject memory phases en_US
dc.title Electron microscopy studies of the crystallization of Ge2Sb2Te5 thin films for phase change memory en_US
dc.type Article en_US


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