IRTUM – Institutional Repository of the Technical University of Moldova

Elaboration of the platform for flexoelectric investigation of GaN microtubes

Show simple item record

dc.contributor.author MONAICO, Elena
dc.contributor.author TRIFAN, Catalin
dc.contributor.author MONAICO, Eduard
dc.contributor.author TIGINYANU, Ion
dc.date.accessioned 2020-12-24T11:39:05Z
dc.date.available 2020-12-24T11:39:05Z
dc.date.issued 2020
dc.identifier.citation MONAICO, Elena, TRIFAN, Catalin, MONAICO, Eduard et al. Elaboration of the platform for flexoelectric investigation of GaN microtubes. In: Journal of Engineering Science. 2020, vol. 27, nr. 4, pp. 45-54. ISSN 2587-3474. eISSN 2587-3482. en_US
dc.identifier.uri https://doi.org/10.5281/zenodo.4288263
dc.identifier.uri http://repository.utm.md/handle/5014/12296
dc.description.abstract In this paper, the design and elaboration of a cost-effective technological process for the fabrication of the platform for the study of flexoelectric properties of GaN microtubes with the diameter of 2 - 5 μm and the thickness of the microtube walls of 50 nm is proposed. The impact of the design as well as the electrochemical etching parameters (applied voltage, duration of anodization) on the obtained channel dimensions is investigated. The proposed technological route implies electrochemical etching of n-InP semiconductor crystal in an environmentally friendly electrolyte at high etch rate. The technological process was optimized experimentally. It was proposed to introduce a perpendicular channel in which the microtube will be placed to reach a higher stability on the platform during the measurements. en_US
dc.description.abstract În lucrare se propune proiectarea și elaborarea unui proces tehnologic rentabil pentru fabricarea platformei destoinate studiului proprietăților flexoelectrice a microtuburilor GaN cu diametrul de 2 - 5 μm și grosimea pereților microtuburilor de 50 nm. A fost investigat impactul proiectării, precum și parametrii de gravare electrochimică (tensiunea aplicată, durata anodizării) asupra dimensiunilor canalului obținut. Traseul tehnologic propus implică gravarea electrochimică a cristalului semiconductor n-InP într-un electrolit ecologic la o rată mare de gravare. Procesul tehnologic a fost optimizat experimental. S-a propus introducerea unui canal perpendicular în care microtubul va fi plasat pentru a atinge o stabilitate mai mare pe platformă în timpul măsurătorilor.
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject microtubes en_US
dc.subject chips en_US
dc.subject anodization en_US
dc.subject flexoelectricity en_US
dc.subject isotropic etching en_US
dc.subject electrolytes en_US
dc.subject etching en_US
dc.subject cipuri en_US
dc.subject anodizare en_US
dc.subject flexoelectricitate en_US
dc.subject gravare izotropă en_US
dc.subject electroliți en_US
dc.subject gravare en_US
dc.subject microtuburi en_US
dc.title Elaboration of the platform for flexoelectric investigation of GaN microtubes en_US
dc.type Article en_US


Files in this item

The following license files are associated with this item:

This item appears in the following Collection(s)

Show simple item record

Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

Search DSpace


Browse

My Account