dc.contributor.author | MONAICO, Elena | |
dc.contributor.author | TRIFAN, Catalin | |
dc.contributor.author | MONAICO, Eduard | |
dc.contributor.author | TIGINYANU, Ion | |
dc.date.accessioned | 2020-12-24T11:39:05Z | |
dc.date.available | 2020-12-24T11:39:05Z | |
dc.date.issued | 2020 | |
dc.identifier.citation | MONAICO, Elena, TRIFAN, Catalin, MONAICO, Eduard et al. Elaboration of the platform for flexoelectric investigation of GaN microtubes. In: Journal of Engineering Science. 2020, vol. 27, nr. 4, pp. 45-54. ISSN 2587-3474. eISSN 2587-3482. | en_US |
dc.identifier.uri | https://doi.org/10.5281/zenodo.4288263 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/12296 | |
dc.description.abstract | In this paper, the design and elaboration of a cost-effective technological process for the fabrication of the platform for the study of flexoelectric properties of GaN microtubes with the diameter of 2 - 5 μm and the thickness of the microtube walls of 50 nm is proposed. The impact of the design as well as the electrochemical etching parameters (applied voltage, duration of anodization) on the obtained channel dimensions is investigated. The proposed technological route implies electrochemical etching of n-InP semiconductor crystal in an environmentally friendly electrolyte at high etch rate. The technological process was optimized experimentally. It was proposed to introduce a perpendicular channel in which the microtube will be placed to reach a higher stability on the platform during the measurements. | en_US |
dc.description.abstract | În lucrare se propune proiectarea și elaborarea unui proces tehnologic rentabil pentru fabricarea platformei destoinate studiului proprietăților flexoelectrice a microtuburilor GaN cu diametrul de 2 - 5 μm și grosimea pereților microtuburilor de 50 nm. A fost investigat impactul proiectării, precum și parametrii de gravare electrochimică (tensiunea aplicată, durata anodizării) asupra dimensiunilor canalului obținut. Traseul tehnologic propus implică gravarea electrochimică a cristalului semiconductor n-InP într-un electrolit ecologic la o rată mare de gravare. Procesul tehnologic a fost optimizat experimental. S-a propus introducerea unui canal perpendicular în care microtubul va fi plasat pentru a atinge o stabilitate mai mare pe platformă în timpul măsurătorilor. | |
dc.language.iso | en | en_US |
dc.publisher | Tehnica UTM | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | microtubes | en_US |
dc.subject | chips | en_US |
dc.subject | anodization | en_US |
dc.subject | flexoelectricity | en_US |
dc.subject | isotropic etching | en_US |
dc.subject | electrolytes | en_US |
dc.subject | etching | en_US |
dc.subject | cipuri | en_US |
dc.subject | anodizare | en_US |
dc.subject | flexoelectricitate | en_US |
dc.subject | gravare izotropă | en_US |
dc.subject | electroliți | en_US |
dc.subject | gravare | en_US |
dc.subject | microtuburi | en_US |
dc.title | Elaboration of the platform for flexoelectric investigation of GaN microtubes | en_US |
dc.type | Article | en_US |
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