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The Ionization Energy Determination of Deep Level Defects in Inhomogeneous Doped Semiconductor Barrier Structures

The Ionization Energy Determination of Deep Level Defects in Inhomogeneous Doped Semiconductor Barrier Structures

GUDZEV, V.; ZUBKOV, M. V.; LITVINOV, V. G.; MASLOV, A. D.
URI: http://repository.utm.md/handle/5014/11834
Date: 2015

Abstract:

In this paper the high accuracy method of determination of the ionization energy of uniformly distributed defects in semiconductor barrier structures with inhomogeneous doped base is developed.

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