Record Single-Mode Power of 1300 nm-Wavelength VCSELs

Abstract

Record-high fundamental mode output power of 6.8 mW at 20 ºC achieved with wafer-fused VCSELs emitting at 1300 nm is reported in this paper. VCSEL contains an InAlGaAs-InP active with buried tunnel junction and undoped AlGaAs/GaAs Distributed Bragg Reflectors. This performance positions wafer-fused VCSELs as prime candidates for many applications in low power consumption, “green” photonics.