Browsing by Subject "nanostructuring"

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  • Application of surface charge lithography to nanostructuring of GaN epilayers 
    POPA, V. Iu.; VOLCIUC, O.; TIGINYANU, I. M.; SARUA, A.; HEARD, P. (Springer Nature Switzerland, 2008)
    It is shown that treatment of GaN epilayers by a low energy low dose focused ion beam with subsequent photoelectrochemical etching represent an efficient tool for GaN nanostructuring. Direct “writing” of a surface negative ...
  • A comparative study of plasmonic effects in electrochemically nanostructured CuInS2 and CuGaS2 crystals 
    URSAKI, Veacheslav (Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, 2014)
    We investigate the differences in electrochemical nanostructuring of CuInS2 and CuGaS2 crystals. It is shown that thermal treatment of CuInS2 crystals either in vacuum or in Zn vapors is a procedure providing necessary ...
  • Comparison of Morphologies of Porous InP Layers Obtained in Different Electrolytes 
    SPRINCEAN, V.; COJOCARU, A.; MONAICO, E.; TIGINYANU, I.; FÖLL, H. (Technical University of Moldova, 2009)
    In this paper we present the possibility for nanostructuring of InP using an electrolyte based on aqueous solution of NaCl. A classical grow of columnar pores was obtained. In particular it was observed that there is no ...
  • Deposition of Al-Sn nanostructured coatings on aluminum surface using electrospark alloying and their wear resistance under lubricated friction 
    AGAFII, V. I.; YURCHENKO, E. V.; YURCHENKO, V. I.; PETRENKO, V. I.; DIKUSAR, A. I. (Tehnica UTM, 2013)
    Under certain modes of electrospark alloying (ESA) of aluminum surfaces using the Al-Sn tool-electrode (TE), nanostructuring of the manufactured surfaces occurs owing to the formation of SnO2 fibers. Examining the tribological ...
  • Electrochemical nanostructuring 
    TIGINYANU, I. M. (Institutul de Fizică Aplicată al AŞM, 2012)
    The work represents a review of technological approaches for 2D and 3D nanostructuring of semiconductor compounds by using radiation treatment and electrochemistry. Novel spatial nanoarchitectures based on III-V and II-VI ...
  • Electrochemistry-based maskless nanofabrication 
    TIGINYANU, Ion; MONAICO, Eduard; POPA, Veaceslav (IEEE, 2012)
    A review of technological approaches for 2D and 3D nanostructuring of semiconductor compounds by using radiation treatment and electrochemical etching is presented. We demonstrate novel spatial nanoarchitectures based on ...
  • GaN nanostructuring for the fabrication of thin membranes and emerging applications 
    TIGINYANU, Ion; URSAKI, Veaceslav (TUBITAK, 2014)
    We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional ...
  • Nanostructurarea, doparea şi funcţionalizarea oxidului de zinc pentru dispozitive senzorice 
    POSTICA, Vasile (Universitatea Tehnică a Moldovei, 2016)
    Scopul lucrării constă in nanostructurarea, doparea și funcționalizarea nanostructurilor de oxid de zinc pentru elaborarea structurilor de senzori eficienți pentru aplicații multifuncționale (detectarea gazelor nocive/explozibile ...
  • Photoluminescence of ZnTe nanowires prepared by electrochemical etching of bulk ZnTe 
    MONAICO, E.; COSEAC, V.; URSAKI, V.V.; SYRBU, N.N.; TIGINYANU, I.M. (Technical University of Moldova, 2009)
    We demonstrate the preparation of ZnTe nanowires with the diameter of 50 nm from bulk p-type ZnTe by means of electrochemical treatment in a pulse regime. The nanowires demonstrate photoluminescence characteristics identical ...
  • Porous morphologies in Si, III-V and II-VI compounds: a comparative study 
    LANGA, S.; MONAICO, E.; FÖLL, H.; TIGINYANU, I.M. (Technical University of Moldova, 2009)
    Porous morphologies obtained during the anodization of semiconductors are mainly determined by particular characteristics of the semiconductor-electrolyte interfaces and the bulk properties of the semiconductor itself. ...
  • Surface charge lithography for GaN micro- and nanostructuring 
    TIGINYANU, Ion M.; POPA, Veaceslav; SARUA, Andrei; HEARD, Peter J.; VOLCIUC, Olesea; KUBALL, Martin (Society of Photo-Optical Instrumentation Engineers, SPIE, 2009)
    We demonstrate the possibility for controlled micro- and nanostructuring of GaN layers by low-dose focusedion-beam (FIB) treatment with subsequent photoelectrochemical (PEC) etching. The proposed novel maskless approach ...
  • Zinc Oxide – The Material of Future Optoelectronics and Photonics 
    TIGINYANU, I.M.; URSAKI, V.V.; RUSU, E.V. (Technical University of Moldova, 2009)
    In this review paper we present new possibilities for nanostructuring of ZnO grown by MOCVD, CVD and electrochemical deposition. The prospects for future applications of ZnO are evaluated on the basis of laser developments. ...

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