Browsing by Subject "nanostructured epilayers"

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  • VOLCIUC, O. S.; POPA, V.; TIGINYANU, I. M.; SKURATOV, V. A.; CHO, M.; PAVLIDIS, D. (Springer Nature Switzerland, 2010)
    Photoelectrochemically nanostructured GaN epilayers were found to exhibit good sensitivity towards CO in the temperature range from 180 to 280°C. We show that subjection of nanostructured GaN samples to 166 MeV Xe+23 ion ...
  • URSAKI, V. V.; TIGINYANU, I. M.; VOLCIUC, O.; POPA, V.; SKURATOV, V. A.; MORKOÇ, H. (American Institute of Physics, 2007)
    The radiation hardness of as-grown and electrochemically nanostructured GaN epilayers against heavy ion irradiation was studied by means of photoluminescence (PL) and resonant Raman scattering (RRS) spectroscopy. A ...

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