Browsing by Subject "nanomembranes"

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  • Cathodoluminescence characterization of suspended GaN nanomembranes 
    STEVENS-KALCEFF, M. A.; TIGINYANU, I. M.; POPA, V.; BRANISTE, T.; BRENNER, P. (AIP Publishing LLC, 2013)
    Continuous suspended ~15 nm thick gallium nitride (GaN) nano-membranes have been investigated using cathodoluminescence microanalysis. The GaN nanomembranes are fabricated by focused ion beam (FIB) pre-treatment of GaN ...
  • Effects of morphology on the emission of photons from GaN membranes fabricated using surface charge lithography 
    STEVENS-KALCEFF, M. A.; TIGINYANU, I. M.; POPA, V.; BRANISTE, T.; BRENNER, P. (Society of Photo-Optical Instrumentation Engineers, SPIE, 2013)
    Cathodoluminescence (CL) microanalysis has been used to investigate ultra-thin suspended GaN membranes fabricated from GaN epilayer surfaces by focused ion beam (FIB) pre-treatment and subsequent photoelectrochemical (PEC) ...
  • Formation of InP nanomembranes and nanowires under fast anodic etching of bulk substrates 
    MONAICO, Eduard; TIGINYANU, Ion; VOLCIUC, Olesea; MEHRTENS, Thorsten; ROSENAUER, Andreas; GUTOWSKI, Jürgen; NIELSCH, Kornelius (ELSEVIER, 2014)
    We demonstrate that fast anodic etching of bulk crystalline substrates of n-InP via photolithographically defined windows leads to the formation of nanomembranes and nanowires being promising for device applications. It ...
  • Formation of low-dimensional structures on InP under fast anodic etching 
    MONAICO, Eduard (Tehnica UTM, 2016)
    In this paper, we report on the possibility of cost-effective fabrication of InP nanomembranes and nanowires using fast anodic etching of n-InP single crystalline substrates under potentiostatic conditions. Fast anodic ...
  • Free-Standing Large-Area Nanoperforated Gold Membranes Fabricated by Hopping Electrodeposition 
    MONAICO, Eduard V.; MONAICO, Elena I.; URSAKI, Veaceslav V.; TIGINYANU, Ion M. (The Electrochemical Society, 2020)
    A room-temperature two-step cost-effective electrochemical technology is proposed for the preparation of free-standing Au nanomembranes. A thin Au film with the thickness less than 100 nm was deposited by pulsed electroplating ...
  • GaN nanostructuring for the fabrication of thin membranes and emerging applications 
    TIGINYANU, Ion; URSAKI, Veaceslav (TUBITAK, 2014)
    We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional ...
  • Learning mechanisms in memristor networks based on GaN nanomembranes 
    DRAGOMAN, Mircea; TIGINYANU, Ion; DRAGOMAN, Daniela; DINESCU, Adrian; BRANISTE, Tudor; CIOBANU, Vladimir (AIP Publishing LLC, 2018)
    We demonstrate experimentally that single crystalline GaN nanomembranes arranged in simple networks exhibit learning mechanisms such as habituation and dishabituation followed by storage of the response to a certain ...
  • Microcharacterization of GaN Nanomembranes Using Cathodoluminescence Microanalysis 
    STEVENS-KALCEFF, Marion A.; TIGINYANU, I. M.; POPA, V. (ProQuest LLC, 2012)
    Gallium nitride (GaN) is a thermally stable, chemically inert wide-band-gap compound semiconductor with applications in high temperature, high power, high frequency electronic devices, solid state sensors, optoelectronics ...
  • Porous semiconductor compounds 
    MONAICO, Eduard; TIGINYANU, Ion; URSAKI, Veaceslav (IOP Publishing, 2020)
    In this review paper, we present a comparative analysis of the electrochemical dissolution of III–V (InP, GaAs, GaN), II–VI (ZnSe, CdSe) and SiC semiconductor compounds. The resulting morphologies are discussed, including ...
  • Procedeu de obţinere a nanomembranei perforate de Au 
    MONAICO, Eduard; MONAICO, Elena; URSACHI, Veaceslav; TIGHINEANU, Ion (Universitatea Tehnica din Cluj-Napoca, 2021)
    Propunem o tehnologie electrochimică cost-efectivă în doi pași la temperatura camerei pentru obținerea nanomembranelor de Au. Un film subțire de Au cu grosime mai mica de 100 nm a fost depus prin depunerea electrochimică ...

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