Browsing by Subject "nanoelectronics"

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  • PENIN, Alexandr; SIDORENKO, Anatoli (Technical University of Moldova, 2011)
    The base approach, giving a wide class of functions convenient for engineering practice for the formal description of I-V characteristics of the MOSFET transistors, is developed. The similarity of I-V characteristics of ...
  • BĂJENESCU, Titu-Marius I.; BÂZU, Marius I. (Tehnica UTM, 2020)
    The article focuses on the analysis of different nanoelectronic architectures with special design rules, taking into account the reliability of the future product. In the next decade, the reliability will play an even ...
  • POSTICA, V.; SCHÜTT, F.; LUPAN, C.; KRÜGER, H.; ADELUNG, R.; LUPAN, O. (Universitatea Tehnică a Moldovei, 2021)
    In this work, the individual hexagonal boron nitride (h-BN) microtubular structures with different diameter (ranging from ≈ 0.2 to ≈ 2.5 μm) and a wall thickness below 25 nm were investigated for the first time by integration ...
  • KANTSER, Valeriu (Technical University of Moldova, 2012)
    With the recent development in material growth method including molecular beam epitaxy, pulsed laser deposition and metalorganic chemical vapor deposition, atomically engineered oxide and other materials like topological ...
  • LUPAN, Oleg (Universitatea Tehnică a Moldovei, 2023)
    Engineering heterostructured nanomaterials for nanoelectronics, as well as for biomedical applications have attracted huge attention in the past decade. It is because heterostructured nanomaterials are constructed by two ...
  • SIDORENKO, Anatolie S. (Beilstein Institute for the Advancement of Chemical Sciences, Germany, 2020)
    Nanotechnology and functional nanostructures, exciting trends of the 21st century, are topics that have penetrated and influenced nearly all areas of human activity: from microelectronics to biology, from aerospace to ...
  • SINGH, R.; ALAPATT, G. F.; GUPTA, N.; POOLE, K. F. (Technical University of Moldova, 2011)
    Nanostructures in dimension below about 10 nm show interesting properties because of the effect of low-dimension physics. However, to utilize these properties in practice to commercialize NEMS and related nano-systems ...
  • ALBU, Sergiu; MONAICO, Eduard; TIGINYANU, I. M.; URSAKI, V. V. (Institutul de Fizică Aplicată, AŞM, 2006)
    The interest in nanometer-scale materials and devices stimulated the development of alternative technologies in recent years. Metal nanowires are one of the most attractive materials because of their unique properties ...
  • SPIVAK, V. M.; VLASIUK, A. G.; TIRSU, M. S. (Tehnica UTM, 2015)
    Summarizes the scientific and educational materials on nanoelectronics, as reflected in monographs and textbooks on the basis of copyright, the most significant results of research and compilation of the most important ...
  • LUPAN, O.; CHOW, L.; CHAI, G.; SCHULTE, A.; PARK, S.; HEINRICH, H.; SONTEA, V.; TROFIM, V.; RAILEAN, S. (Institute of Electrical and Electronics Engineerings, IEEE, 2008)
    A facile aqueous solution process to fabricate tin oxide nanoarchitectures was successfully developed. The influence of precursors on the morphology of SnO2 is studied. Tin oxide nanobelts/nanoribbons were characterized ...

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