Browsing by Author "HARTNAGEL, Hans L."

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  • Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier 
    SIRKELI, Vadim P.; YILMAZOGLU, Oktay; AL-DAFFAIE, Shihab; OPREA, Ion; ONG, Duu Sheng; KÜPPERS, Franko; HARTNAGEL, Hans L. (IOP Publishing, 2016)
    Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that ...
  • Generalized model of the metal/n-GaN Schottky interface and improved performance by electrochemical Pt deposition 
    COJOCARI, Oleg; HARTNAGEL, Hans L. (American Vacuum Society, 2006)
    A modified model of the Schottky interface is proposed, which includes a near-surface layer (NSL) in the depletion region of the semiconductor. An important effect of the NSL is the ability to make the value of the Schottky ...
  • High-performance near-ultraviolet avalanche photodetectors based on ZnSe 
    SIRKELI, Vadim P.; NEDEOGLO, Natalia D.; NEDEOGLO, Dmitrii D.; YILMAZOGLU, Oktay; HAJO, Ahid S.; PREU, Sascha; KÜPPERS, Franko; HARTNAGEL, Hans L. (Tehnica UTM, 2018)
    This We report on high-responsivity, fast nearultraviolet avalanche photodetectors based on bulk ZnSe employing a metal-semiconductor-metal structure. A very high responsivity of 2.42 A/W and 4.44 A/W at 20 V bias voltage ...
  • Resonant tunneling transport in ZnxBe1-xSe/ZnSe/ZnyBe1-ySe asymmetric quantum structures 
    SIRKELI, Vadim P.; YILMAZOGLU, Oktay; AL-DAFFAIE, Shihab; OPREA, Ion; ONG, Duu Sheng; KÜPPERS, Franko; HARTNAGEL, Hans L. (International Society for Optics and Photonics, 2017)
    II-VI compounds are promising materials for the fabrication of room-temperature terahertz devices due to their beneficial properties like as type-I conduction band alignment, high breakdown field strength (~331 kV/cm for ...
  • ZnSe-based conductive nanotemplates for nanofabrication 
    MONAICO, Eduard; TIGHINEANU, Petru; LANGA, Sergiu; HARTNAGEL, Hans L.; TIGINYANU, Ion (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2009)
    We show that anodic etching of n-type ZnSe crystalline substrates leads to the formation of pores which, after nucleation at surface defects, prove to follow the current lines, exhibiting multiplication until the front of ...

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