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  • Luminescence and trapping of light in porous InP networks 
    MONAICO, E.; URSAKI, V. V.; BURLACU, A.; TIGINYANU, I. M. (Technical University of Moldova, 2005)
    In this paper we investigate the effect of light trapping inside highly scattering InP porous layers on the luminescence properties of the material.
  • Luminescence at the axial centers of CdP2-D48 crystals 
    BERIL, S. I.; PANASENCO, V. V.; TKACHENKO, D. V.; STAMOV, I. G.; SYRBU, N. N. (Elservier, 2018)
    Emission lines of free excitons and excitons bound to axial centers have been observed in the luminescence spectra of CdP2-D48 crystals doped with Mn, Sn, and Sb at 10 K. Bands models of excitons bound to axial centers ...
  • Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching 
    TIGINYANU, I. M.; URSAKI, V. V.; ZALAMAI, V. V.; LANGA, S.; HUBBARD, S.; PAVLIDIS, D.; FÖLL, H. (American Institute of Physics, 2003)
    GaN nanocolumns with transverse dimensions of about 50 nm were obtained by illumination-assisted anodic etching of epilayers grown by metalorganic chemical vapor deposition on sapphire substrates. The photoluminescence ...
  • Luminescence of nanocomposites with different coordination of Eu+3 ions and polymers 
    VERLAN, V. I.; IOVU, M. S.; ANDRIESH, A. M.; CULEAC, I.; TURTA, C. I.; ZUBAREVA, V. E. (Technical University of Moldova, 2012)
    Thin films (1-3 μm thickness) of nanocomposites (NCs) based on organic compounds with Eu3+ ions (Eu(TTA)3H2O, Eu(TTA)3Phen, Eu(DBM)3Phen and Eu(TTA)2(Ph3PO)2NO3) and polymer polyvinylpyrrolidone (PVP) or copolymer ...
  • Luminescence of porous semiconductor media covered with metallic films 
    POSTOLACHE, Vitalie (Academy of Sciences of Moldova, 2016)
    Porous GaP and InP layers with a pore diameter and a skeleton wall thickness of about 50 nm are prepared on bulk substrates by anodization; microgranular ZnO structures are produced by thermal treatment of ZnTe single ...
  • Luminescence of porous ZnSe layers 
    MONAICO, E.; URSAKI, V. V.; BURLACU, A.; TIGINYANU, I. M. (Technical University of Moldova, 2005)
    In this paper we compare the luminescence properties of bulk ZnSe crystals and porous layers prepared by photon-assisted electrochemical etching.
  • Luminescence of Single Crystals of Manganesedoped Zinc Indium Binary Sulfides 
    ARAMA, Efim; VOVC, Victor; GHEORGHITA, Eugene Iv.; PINTEA, Valentina (Technical University of Moldova, 2013)
    Radiative recombination spectra of Mn-doped zinc tioindat single crystals have been analyzed in the work. The emission spectra interval close to its maximum (1,91±0,2) eV contains a number of the special features which ...
  • Luminescence of ZnGa2Î4 AND ZnAl2Î4 spinels doped with Eu3+AND Tb3+ ions 
    RUSU, E.; URSAKI, V.; NOVITSCHI, G.; BURLACU, A.; PETRENKO, P.; KULIUK, L. (I. I. Mechnikov National University, Odessa, 2008)
    Spinel type mono-phase the ZnGa2O4 and ZnAl2O4 compounds doped with Eu3+ and Tb3+ ions were obtained using two methods: solid phase reactions and deposition from chemical solutions. The luminescent analysis of the materials ...
  • Luminescence of ZnSe crystals grown with different vapor transport agents 
    ENACHE, M.; URSAKI, V. V.; RUSU, E. V.; TAZLAVAN, V. E.; SONTEA, V. P.; TIGINYANU, I. M. (Technical University of Moldova, 2005)
    In this paper we compare the luminescence properties of bulk ZnSe crystals grown by vapor transport method with different transport agents in order to establish the influence of the transport agent on the relation between ...
  • Luminescence of β-Ga2O3 Nanoforms Obtained by Oxidation of GaSe Doped with Eu 
    SPRINCEAN, V.; UNTILA, D.; CHIRITA, A.; EVTODIEV, I.; CARAMAN, I. (Tehnica UTM, 2019)
    The GaSe single crystals were doped with Eu in the process of their synthesis and growth. The oxide of β-Ga2O3 doped with Eu in the form of massive nanowires was obtained by thermal treatment (TT) in the atmosphere of GaSe ...
  • Luminescence Properties of a Novel Eu3+ Dinuclear Coordination Compound 
    VERLAN, V. I.; CULEAC, I. P.; BORDIAN, O.; ZUBAREVA, V. E.; BULHAC, I.; IOVU, M. S.; ENACHESCU, M.; SIMINEL, N. A.; NEDELEA, V. V. (Tehnica UTM, 2019)
    The paper presents experimental results on a novel Eu3+ dinuclear coordination compound [Eu(µ2-OC2H5)(NO)3(phen)]2•phen with high emission quantum yield. The complex has been characterized by photoluminescence (PL) ...
  • Luminescence properties of a ZnO–In2O3 composite 
    URSAKI, V. V.; TIGINYANU, I. M.; BURLACU, A.; ZALAMAI, V.; JITARI, V. F. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2006)
    ZnO–In2O3 composite was prepared by thermal annealing of ZnIn2S4 crystals. Energy dispersive X-ray analysis demonstrated that annealing results in the formation of a composite consisting of ZnO and In2O3 phases with the ...
  • Luminescence properties of poly- (phenylene vinylene) derivatives 
    CUONG, Ton-That; GEOFF, Stockton; PHILLIPS, Matthew R.; NGUYEN, Thien-Phap; HUANG, Chun Hao; COJOCARU, Ala (John Wiley & Sons, Inc., 2008)
    Three PPV derivatives, BEHPPV, MEHPPV and MEHSPPV, were synthesised and characterised by photoluminescence (PL) and cathodoluminescence (CL) spectroscopies in the temperature range 10–300 K. PL and CL spectra of the polymers ...
  • Luminescence properties of ZnGa2O4 and ZnAl2O4 spinels doped with Eu3+ and Tb3+ ions 
    RUSU, E.; URSAKI, V.; NOVITSCHI, G.; VASILE, M.; PETRENCO, P.; KULYUK, L. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2009)
    Spinel-type ZnGa2O4 and ZnAl2O4 powders doped with Eu3+ and Tb3+ ions, including dual doping, have been prepared by solid phase reactions and by deposition from chemical solutions. XRD analysis demonstrates the high quality ...
  • Luminescent and optical spectroscopy of ZnO crystals obtained by new method based on the halide vapor transport 
    COLIBABA, G. V.; SHTEPLIUK, I. I.; GONCEARENCO, E. P.; INCULET, I. (Technical University of Moldova, 2015)
    The photoluminescence (PL), transmittance and IR reflectance spectra were investigated for ZnO single crystals grown by the HCl chemical vapor transport technique. Electrical parameters were also calculated from the Hall ...
  • Luminescent and Photoconductive Properties of AgGa2.5In2.5S8 and CuGa2.5In2.5S8 New Semiconductors 
    ANEDDA, A.; SERPI, A.; MOLDOVYAN, N. A.; TIGINYANU, I. M.; URSAKI, V. V. (IOP Publishing, 1993)
    Results of a complex study of photoluminescence (PL), photoconductivity (PC) and photo-voltaic (PV) spectra in AgGa2.5In2.5S8 and CuGa2.5In2.5S8 single crystals are presented. The values of indirect (Egi=2.25 eV) and direct ...
  • Luminescent materials based on semiconductor compound templates for random laser applications 
    URSAKI, V. V.; TIGINYANU, I. M.; SIRBU, L.; ENACHI, M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2009)
    A survey of methods for the preparation of luminescent nanocomposite materials with the focus on random laser media on the basis of porous semiconductor and dielectric templates is presented. Media with controlled light ...
  • The luminescent properties of a ZnGa2O4 spinel doped with Eu 3+ and Er3+ ions 
    VASILE, M.; VLAZAN, P.; SFIRLOAGA, P.; GROZESCU, I.; AVRAM, N. M.; RUSU, E. (IOP Publishing, 2009)
    Nanophosphor of ZnGa2O4:Eu3+ and Er3+ were synthesized by the hydrothermal method. ZnGa2O4 is an intrinsic blue light emitter with a wavelength peak of approximately 608 nm depending on the gallium ratio. A luminescent ...
  • Luminescent properties of rare earth activated ZnO binary and ternary materials 
    ROGACHEV, Alexander; SEMCHENKO, A.; SIDSKY, V.; KOVALENKO, D.; GREMENOK, V.; ZARETSKAYA, H.; RUSU, Emil; TIVANOV, M. (Institutul de Fizică Aplicată, 2016)
    Development by sol-gel method of nanostructured luminescent materials based on binary and ternary oxides and containing rare earth ions for use as inorganic photoluminophors, active layers for solar cells and inert ...
  • Luminescent properties of triple semiconductors under the action of X rays 
    MACIUGA, A.; RADU, R.; PÎNTEA, V.; STRATAN, I.; NISTIRIUC, I. (Technical University of Moldova, 2005)
    This article focuses on the description of triple semiconductors of type, especially , and the researeh instalation over luminescent properties under the action of accelerated electrons and X-rays. VI III II C B A 4 2 4 2 S CdGa.

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