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  • Radio-absorption shielding 
    BARANOV, S. A.; POPOV, V. V.; QIN, F. X. (Tehnica UTM, 2014)
    A correlation between the frequency of natural ferromagnetic resonance (NFMR) (1 to 12 GHz), determined from the dispersion of permeability, and alloy composition (or magnetostriction between 1 and 40 ppm) of glass-coated ...
  • Radiotehnica. Îndrumar metodic pentru lucrări de laborator 
    SOROCHIN, Gherman (Universitatea Tehnică a Moldovei, 2007)
    Îndrumarul conţine noţiuni teoretice, lista întrebărilor de control necesare pentru pregătirea şi susţinerea lucrării de laborator, bibliografie. Este destinat studenţilor anului II U de zi şi IV fără frecvenţă specialităţii ...
  • Radioul online: componenta umană şi tehnică 
    MARCU, Mariana (Tehnica UTM, 2018)
    The evolution of information technologies requires changes in all areas of human activity, including the field of journalism and media processes. In the context of conceptual and functional changes generated by new information ...
  • Rain cover for table grapes and its benefits 
    BOTEZATU, Andrei (Universitatea de Studii Europene din Moldova, 2024)
    Agriculture represents a vital component of the global economy, and table grape production is one of the most significant agricultural activities worldwide. However, farmers often face weather-related challenges, such as ...
  • Raman and electrical characterization of n-InP implanted by 630-keV nitrogen 
    TIGINYANU, I. M.; MIAO, J.; HARTNAGEL, H. L.; RUCK, D.; TINSCHERT, K.; URSAKI, V. V.; ICHIZLI, V. M. (IEEE, 1996)
    The goal of this work was to study the peculiarities of lattice disorder and conductivity compensation caused by N-implantation in liquid encapsulated Czochralski grown n-InP single crystals. The ion-induced damage of the ...
  • Raman and Hall-effect characterization of Zn/sup +//P/sup +/ co-implanted GaAs subjected to rapid thermal annealing 
    URSAKI, V. V.; TERLETSKY, A. I.; TIGINYANU, I. M. (IEEE, 1998)
    It is shown that Zn/sup +//P/sup +/ co-implantation in combination with rapid thermal annealing (RTA) allows one to obtain p-type GaAs layers with the peak hole concentration as high as 2.10/sup 19/ cm/sup -3/ and narrow ...
  • Raman and infrared vibrational spectra of PbGa2S4 crystal 
    ZALAMAI, V. V.; SYRBU, N. N.; BEJAN, N. P.; HIRJEU, I. (Institutul de Fizică Aplicată, 2016)
    Raman scattering spectra in different geometries at temperatures 10 - 300 K and infrared vibrational spectra were investigated for PbGa2Se crystals. Contours of reflection spectra were calculated and parameters of phonons ...
  • Raman and IR-Reflectance Spectra of Porous III–V Semiconductor Structures 
    SARUA, A.; GÄRTNER, G.; IRMER, G.; MONECKE, J.; TIGINYANU, I. M.; HARTNAGEL, H. L. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2000)
    Porous layers on the basis of LEC-grown n-type crystals of (111)-GaP and (100)-InP were fabricated by electrochemical etching in aqueous acidic solutions. The prepared samples were studied by micro-Raman analysis and by ...
  • Raman microscopy of ferroelectric Sb-S-I glasses doped with Fe 
    CELIC, N.; GUT, I.; CAJKO, K.; BOSAK, O.; BARTOSOVA, A.; LUKIC–PETROVIC, S. (Tehnica UTM, 2019)
    Chalcogenide glass-ceramics are very promising materials for different applications in the modern society. They are well known for their optical and electronic properties opening wide range of possible applications. Doping ...
  • Raman Modes in Porous GaP under Hydrostatic Pressure 
    TIGINYANU, I. M.; URSAKI, V. V.; RAPTIS, Y. S.; STERGIOU, V.; ANASTASSAKIS, E.; HARTNAGEL, H. L.; VOGT, A.; PRÉVOT, B.; SCHWAB, C. (John Wiley & Sons, Inc., 1999)
    Bulk and free-standing porous membranes of GaP have been characterised by Raman spectroscopy under hydrostatic pressure, with emphasis to the Fröhlich surface vibration mode. Under compression, an increase in the frequency ...
  • Raman scattering analysis of InGaAs/InP: effect of rare earth (dysprosium) addition during liquid phase epitaxial growth 
    TIGINYANU, I. M.; URSAKI, V. V.; PODOR, B.; CSONTOS, L.; SHONTYA, V. P. (IEEE, 1996)
    The authors present the results of Raman scattering investigation of the effect of the variation of the Dy doping level on the properties of InGaAs layers on InP, with the aim to elucidate the mechanisms of the effects of ...
  • Raman scattering by porous structures with InAs quantum dots 
    MILEKHIN, Alexander; URSAKI, Veacheslav; SIRBU, Lilian; TOROPOV, Alexander; TIGINYANU, Ion; ZAHN, Dietrich R. T. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2009)
    In this paper we search for the possibilities of introducing porosity in InAs/AlAs/GaAs multilayer quantum dot structures as an additional tool for the modification of their phonon spectrum. Raman spectroscopy is used as ...
  • Raman scattering evidence on the correlation of middle range order and structural self-organization of As-S-Ge glasses in the intermediate phase region 
    TSIULYANU, D.; VERES, M.; HOLOMB, R.; CIOBANU, M. (Elsevier, 2023)
    The Raman scattering of bulk nonstoichiometric chalcogenide alloys along the pseudo-binary AsS3 – GeS4 tie-line, which completely lies in the intermediate phase (IP) region of As-S-Ge ternary system was investigated in ...
  • Raman scattering in Me-doped ZnO nanorods (Me = Mn, Co, Cu and Ni) prepared by thermal diffusion 
    PHAN, The Long; VINCENT, Roger; CHERNS, David; NGHIA, Nguyen Xuan; URSAKI, V. V. (IOP Publishing, 2008)
    We have investigated normal and resonant Raman scattering in Me-doped ZnO nanorods (Me = Mn, Co, Cu and Ni) prepared by thermal diffusion. Experimental results show that the normal Raman spectra consist of the conventional ...
  • Raman scattering in right angle configuration on Cu2ZnSiSe4 single crystals 
    GUC, M.; LEVCENKO, S.; ZALAMAI, V.; ARUSHANOV, E.; SYRBU, N. N. (Elservier, 2017)
    Polarized Raman scattering and resonance Raman scattering spectra of Cu2ZnSiSe4 crystals measured at temperature 300 and 10 K were investigated. Nine vibrational modes of A2 symmetry, seven modes of B2 symmetry and nine ...
  • Raman scattering investigation of MnxFe1−xIn2S4 solid solutions 
    GUC, M.; URSAKI, V. V.; BODNAR, I. V.; LOZHKIN, D. V.; ARUSHANOV, E.; IZQUIERDO-ROCA, V.; PÉREZ RODRÍGUEZ, A. (ELSEVIER, 2012)
    Spinel-type MnxFe1−xIn2S4 solid solutions grown by the planar melt crystallization method (the horizontal version of the Bridgman method) are investigated by means of energy dispersive X-ray analysis and Raman scattering ...
  • Raman scattering of Ge-As-Se thin films 
    IASENIUC, O. V.; IOVU, M. S.; GHIULNARE, A.; MESTERCA, R.; JDERU, A.; ENACHESCU, M. (Tehnica UTM, 2018)
    Raman and infrared spectroscopy are efficient methods for obtaining information on the local structure of the disordered material, especially when the composition is varied. In particular, Micro-Raman spectroscopy have ...
  • Raman scattering study of pressure-induced phase transitions in AIIB2IIIC4VI defect chalcopyrites and spinels 
    TIGINYANU, I. M.; URSAKI, V. V.; MANJÓN, F. J.; TEZLEVAN, V. E. (ELSEVIER, 2003)
    AIIB2IIIC4VI defect chalcopyrites (DC) and spinels were investigated by Raman scattering spectroscopy under hydrostatic pressure up to 20 GPa. All these compounds were found to undergo a phase transition to a Raman inactive ...
  • Raman scattering study of pressure-induced phase transitions in MIn2S4 spinels 
    URSAKI, V. V.; MANJÓN, F. J.; TIGINYANU, I. M.; TEZLEVAN, V. E. (IOP Publishing, 2002)
    MIn2S4 (M = Mn, Cd, Mg spinels were investigated by Raman scattering spectroscopy under hydrostatic pressure up to 20 GPa. These compounds were found to undergo a reversible phase transition to a Raman-inactive defect ...
  • Raman scattering study of Zn/sup +//P/sup +/ co-implanted GaAs single crystals 
    URSAKI, V. V.; ICHIZLI, V. M.; TIGINYANU, I. M.; TERLETSKII, A. I.; CALUJA, Y. I.; RADAUTSAN, S. I. (IEEE, 1995)
    The activation efficiency of zinc impurity co-implanted with P/sup +/ ions in GaAs single crystals was studied by Raman scattering (RS) at phonon-plasmon coupled modes. P/sup +/ co-implantation has been found to result in ...

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