Characterization of silicon p-i-n photodiode electrophysical parameters

Abstract

Electrophysical parameters of test structures formed in high - resistivity silicon during manufacturing of p-i-n photodiodes have been investigated. Using specially designed metal-insulator-semiconductor (MIS) structures important electrophysical characteristics of Si-SiO2 and Si-SiO2-Si3N4 systems were examined. Surface generation velocity Sg, bulk generation life-time of minority carriers τg and fixed charge in the insulator Qss have been determined. These parameters reflect the quality of insulator-semiconductor interface and near surface semiconductor layer. The effect of insulator type on Sg values have been found. The influence of electric field in the insulator on generation of minority carriers in MIS structures was shown. Designed test structures have proved their high effectiveness for investigation of generation parameters in p-i-n photodiodes.